Properties of zinc selenide
WebZinc sulfide (ZnS) thin films with variable structural, optical, electrical, and thermoelectric properties were obtained by changing the source-to-substrate (SSD) distance in the physical-vapor-thermal-coating (PVTC) system. The films crystallized into a zinc-blende cubic structure with (111) preferred orientation. The films had a wide 3.54 eV optical band gap. Web2 days ago · Among the three ETL materials used, zinc selenide (ZnSe) shows the best results due to its wider band gap. We have found that the cells with the FTO window layer show slightly better performance than those with the graphene. Maximum photovoltaic efficiency of 28.54% has been achieved for the solar cell of the structure …
Properties of zinc selenide
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WebJul 16, 2013 · Activation energies ranged from 0.05 to 0,95 eV. The reduction of the free electron concentration with increasing indium or gallium content in the crystals, is … WebJul 14, 2014 · Zinc selenide (ZnSe) semiconductor nanowires were fabricated in a two electrode electrochemical cell by template-assisted dc electrodeposition technique at temperature 30 °C. The conducting material (ITO) is used as substrate for the deposition of nanowires and act as cathode in electrochemical cell.
WebProperties. ZnSe can be made in both hexagonal and cubic crystal structure.It is a wide-bandgap semiconductor of the II-VI semiconductor group (since zinc and selenium belong to the 12th and 16th groups of the periodic table, respectively).The material can be doped n-type doping with, for instance, halogen elements. P-type doping is more difficult, but can … WebAug 1, 2011 · Zinc selenide (ZnSe) thin films (d = 0.10 - 1.20 μm) were deposited onto glass substrates by the quasi-closed volume technique under vacuum. The film structure was …
WebThe paper reports the detailed analysis of photoconductivity and photo-detecting properties of vacuum deposited zinc selenide (ZnSe) thin films. The vacuum deposited ZnSe films were found to have high absorption coefficient and showed peak photo-response at 460 nm. The photocurrent and photo-response time of the films were measured as a ... http://etheses.dur.ac.uk/7564/
WebOct 1, 2016 · Introduction. As an important II–VI semiconductor, zinc selenide (ZnSe) is one of the first semiconductors discovered and is probably one of the most important electronic and optoelectronic materials with prominent applications in nonlinear optical devices, flat panel displays, light emitting diodes (LEDs), lasers, logic gates, transistors, etc.
WebMar 10, 2010 · We calculate the optical properties of InP and CdSe colloidal quantum dots (QDs) within the framework of the atomic effective pseudopotential approach and the … itext closeWebJul 16, 2013 · The main purpose of the research reported in this thesis was to investigate the behaviour of zinc selenide crystals doped with group III impurities such as indium and gallium, with the aim of understanding the processess of self-compensation involved which prevent them from being converted to p-type. The crystals which were grown from the … itext chinese fontWebJan 25, 2001 · The electrical conductivity and Hall coefficient of a variety of single crystals of zinc selenide have been measured. As-grown, undoped crystals have a resistivity ( approximately 10 12 Omega cm) which is too large for … itextbookWebMar 1, 2024 · Zinc selenide doped with chromium is the most promising active medium material for generating radiation in the wavelength range 2–5 μm. Selective absorption … needoh gobs of globsWebApr 5, 2013 · Zinc selenide is a light yellow binary solid compound that rarely occurs in nature. It is a chemically inert, non-hygroscopic and highly pure material largely found in … itext booksWebJul 1, 2016 · Zinc selenide (ZnSe) is an important and promising, direct band gap compound semiconducting material for applications to the various optical and electronic devices [1], … itext bmpWebSep 10, 2010 · Introduction. In recent years, nanostructured zinc selenide (ZnSe) as a direct wide-band gap II–VI group semiconductor material has gained considerable attention because it has a band gap energy of 2.8–2.99 eV at room temperature [1], [2] and unique properties depending on different structures [3], [4], [5], [6].For example, the hollow ZnSe … needohball stress balls