Web31 Mar 2024 · 通过应变硅技术，可以更多地提升空穴迁移率，电子和空穴的迁移率更加匹配，CMOS电路中 NMOS和 PMOS器件的尺寸比将得到改善。. 另外，如果采用应变硅材料 … Strained silicon is a layer of silicon in which the silicon atoms are stretched beyond their normal interatomic distance. This can be accomplished by putting the layer of silicon over a substrate of silicon–germanium (SiGe). As the atoms in the silicon layer align with the atoms of the underlying silicon germanium layer (which are arranged a little farther apart, with respect to those of a bulk silicon crystal), the links between the silicon atoms become stretched - thereby leading to strain…

IBM reveals new strain of chip power - CNET

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Strained silicon — the key to sub-45 nm CMOS - ScienceDirect

Web1 Apr 2006 · Technical Feature: Strained siliconStrained silicon — the key to sub-45 nm CMOS. Strained silicon — the key to sub-45 nm CMOS. Strain techniques, such as incorporating SiGe, should boost performance in future generations of CMOS silicon transistors without the need to radically scale transistor dimensions. Although strain is … http://m.chinaaet.com/tech/designapplication/3000093244 http://www.maltiel-consulting.com/Integrating_high-k_Metal_Gate_first_or_last_maltiel_semiconductor.html getting a known traveler number